ES3BHM6G
DIODE GEN PURP 100V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ES3BHM6G is a fast-switching general-purpose diode with a repetitive peak reverse voltage (Vr) of 100V and an average rectified forward current (Io) of 3A. This AEC-Q101 qualified component features a low forward voltage drop (Vf) of 950mV at 3A and a reverse leakage current (Ir) of 10 µA at 100V. The device has a reverse recovery time (trr) of 35 ns, classifying it within the fast recovery speed category. Housed in a DO-214AB (SMC) surface-mount package, it operates across a junction temperature range of -55°C to 150°C. Its capacitance at 4V and 1MHz is 45pF. The ES3BHM6G is suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
| Qualification | AEC-Q101 |
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