ES2LGHR5G
DIODE GEN PURP 400V 2A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ES2LGHR5G is a fast recovery general-purpose diode with a maximum repetitive peak reverse voltage (Vrrm) of 400V and a continuous average forward current (Io) of 2A. This device features a forward voltage (Vf) of 1.3V at 2A and a reverse leakage current (Ir) of 10 µA at 400V. The junction capacitance is specified at 20pF @ 4V, 1MHz. Housed in a DO-214AA (SMB) package for surface mounting, the ES2LGHR5G operates from -55°C to 150°C. It meets AEC-Q101 qualification, indicating its suitability for automotive applications. The reverse recovery time (trr) is 35 ns, classifying it as a fast recovery diode.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 20pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 2 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 400 V |
| Qualification | AEC-Q101 |
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