ES2LDHR5G
DIODE GEN PURP 200V 2A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES2LDHR5G is a general-purpose, fast-recovery diode designed for demanding applications. This surface-mount component, packaged in a DO-214AA (SMB) case, offers a maximum DC reverse voltage of 200V and an average rectified forward current of 2A. It features a low forward voltage drop of 940mV at 2A and a reverse leakage current of just 10µA at its rated 200V. The diode exhibits a reverse recovery time of 35ns, classifying it as fast recovery. With a junction operating temperature range of -55°C to 150°C and AEC-Q101 qualification, this device is suitable for automotive and industrial sectors. The ES2LDHR5G is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 940 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Qualification | AEC-Q101 |
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