ES2JAHR3G
DIODE GEN PURP 600V 2A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ES2JAHR3G is a general-purpose rectifier diode with a 600V reverse voltage rating and a 2A average rectified forward current. This surface-mount component utilizes a DO-214AC (SMA) package and features a fast recovery time of 35 ns. Its forward voltage drop is a maximum of 1.7V at 2A. The diode exhibits a low reverse leakage current of 10 µA at its maximum reverse voltage of 600V. Designed for demanding applications, it operates across a junction temperature range of -55°C to 150°C. This device is AEC-Q101 qualified, making it suitable for automotive applications. Its low capacitance of 20pF at 4V and 1MHz is also noteworthy for high-frequency performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 20pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 2 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Qualification | AEC-Q101 |
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