ES2C M4G
DIODE GEN PURP 150V 2A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ES2C-M4G is a general-purpose diode with a repetitive peak reverse voltage (Vrrm) of 150V. This Fast Recovery diode features an average rectified forward current (Io) of 2A and a maximum forward voltage (Vf) drop of 950mV at 2A. The reverse leakage current is a mere 10 µA at its maximum reverse voltage of 150V. With a reverse recovery time (trr) of 35 ns and a junction capacitance of 25pF at 4V and 1MHz, the ES2C-M4G is suitable for applications requiring efficient switching. It is housed in a DO-214AA (SMB) surface-mount package and operates within a temperature range of -55°C to 150°C. This component is commonly utilized in power supplies, automotive electronics, and industrial control systems. The part number is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 150 V |
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