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ES2BHM4G

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ES2BHM4G

DIODE GEN PURP 100V 2A DO214AA

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

Quality Control: Learn More

Taiwan Semiconductor Corporation ES2BHM4G is a general-purpose diode with a 100V reverse voltage rating and a 2A average rectified forward current. This AEC-Q101 qualified component features a fast recovery time of 35 ns and a typical forward voltage drop of 950 mV at 2A. Its low reverse leakage current is 10 µA at 100V, with a capacitance of 25pF at 4V and 1MHz. The ES2BHM4G is housed in a DO-214AA (SMB) surface mount package, supplied on tape and reel. This diode is suitable for automotive applications requiring robust performance and reliability, operating across a junction temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDO-214AA, SMB
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard
Capacitance @ Vr, F25pF @ 4V, 1MHz
Current - Average Rectified (Io)2A
Supplier Device PackageDO-214AA (SMB)
Operating Temperature - Junction-55°C ~ 150°C
GradeAutomotive
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 2 A
Current - Reverse Leakage @ Vr10 µA @ 100 V
QualificationAEC-Q101

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