ES2AHR5G
DIODE GEN PURP 50V 2A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ES2AHR5G is a general-purpose diode with a maximum reverse voltage of 50 V and an average rectified current of 2 A. This surface mount component, housed in a DO-214AA (SMB) package, features a forward voltage of 950 mV at 2 A and a reverse leakage current of 10 µA at 50 V. The diode exhibits a reverse recovery time (trr) of 35 ns, classifying it as a fast recovery diode. It operates across a junction temperature range of -55°C to 150°C and is qualified to AEC-Q101 standards, making it suitable for automotive applications. The device capacitance is 25 pF at 4 V and 1 MHz. The ES2AHR5G is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
| Qualification | AEC-Q101 |
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