ES2AHM4G
DIODE GEN PURP 50V 2A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation's ES2AHM4G is a General Purpose Diode designed for demanding applications. This AEC-Q101 qualified component features a 50V reverse voltage rating and a 2A average rectified forward current. With a fast recovery time of 35 ns, it is suitable for applications requiring efficient switching. The forward voltage drop is a maximum of 950 mV at 2A, and the reverse leakage current is a low 10 µA at 50V. The device is housed in a DO-214AA (SMB) surface mount package and operates within a junction temperature range of -55°C to 150°C. Its low capacitance of 25pF at 4V and 1MHz, coupled with its automotive grade qualification, makes it a robust choice for automotive and industrial power management systems. The ES2AHM4G is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
UG12JH
20NS, 12A, 600V, ULTRA FAST RECO
MBRS1645H
16A, 45V, SCHOTTKY RECTIFIER
TST30U45C
DIODE SCHOTTKY 45V 15A TO220AB
