ES2A M4G
DIODE GEN PURP 50V 2A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ES2A-M4G is a general-purpose diode designed for demanding applications requiring efficient rectification. This surface-mount component, housed in a DO-214AA (SMB) package, offers a maximum DC reverse voltage of 50V and a continuous average rectified forward current of 2A. Key electrical characteristics include a forward voltage drop of 950mV at 2A and a reverse leakage current of 10µA at 50V. With a reverse recovery time of 35ns, this diode is classified as fast recovery, suitable for power supply, switching, and high-frequency circuits. The operating junction temperature range is -55°C to 150°C, ensuring reliability across a broad spectrum of environmental conditions. Industries such as automotive, industrial control, and consumer electronics frequently utilize this component for its performance and robust construction. Packaging is provided on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
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