ES1LJHR3G
DIODE GEN PURP 600V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES1LJHR3G is a general purpose, fast recovery diode with a maximum repetitive peak reverse voltage of 600V. This surface mount device, packaged in a DO-214AC (SMA) footprint, offers an average rectified forward current of 1A. Its low reverse leakage current is 5 µA at 600V. The ES1LJHR3G features a forward voltage drop of 1.7V at 1A and a reverse recovery time of 35ns. With a junction capacitance of 18pF at 4V and 1MHz, it operates across a temperature range of -55°C to 150°C. This component is AEC-Q101 qualified, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 18pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Qualification | AEC-Q101 |
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