ES1LG R3G
DIODE GEN PURP 400V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's DIODE GEN PURP 400V 1A ES1LG-R3G is a general-purpose rectifier diode with a maximum repetitive reverse voltage (Vr) of 400V and an average rectified forward current (Io) of 1A. This component features a fast recovery time (trr) of 35 ns and a forward voltage drop (Vf) of 1.3V at 1A. The reverse leakage current at Vr is 5 µA @ 400 V, with a capacitance of 18pF @ 4V, 1MHz. Housed in a DO-214AC (SMA) surface mount package, the ES1LG-R3G operates across a junction temperature range of -55°C to 150°C. This device is suitable for various industrial applications including power supplies, switching circuits, and general rectification. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 18pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
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