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ES1LDHR3G

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ES1LDHR3G

DIODE GEN PURP 200V 1A DO214AC

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

Quality Control: Learn More

Taiwan Semiconductor Corporation ES1LDHR3G is a general-purpose diode designed for high-reliability applications. This surface mount component, housed in a DO-214AC (SMA) package, offers a repetitive peak reverse voltage of 200V and a continuous average rectified forward current of 1A. Key specifications include a forward voltage drop of 950mV at 1A and a reverse leakage current of 5µA at 200V. With a fast recovery time of 35ns, this diode is suitable for power supply rectification and switching applications. Its AEC-Q101 qualification indicates suitability for the automotive industry. The operating junction temperature range is -55°C to 150°C. This device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDO-214AC, SMA
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard
Capacitance @ Vr, F16pF @ 4V, 1MHz
Current - Average Rectified (Io)1A
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C
GradeAutomotive
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 1 A
Current - Reverse Leakage @ Vr5 µA @ 200 V
QualificationAEC-Q101

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