ES1LD R3G
DIODE GEN PURP 200V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES1LD-R3G is a general-purpose diode featuring a 200V reverse voltage and 1A average rectified forward current (Io). This surface mount component, housed in a DO-214AC (SMA) package, offers a fast recovery time of 35 ns. The diode exhibits a maximum forward voltage (Vf) of 950 mV at 1A and a low reverse leakage current of 5 µA at its maximum reverse voltage (Vr) of 200V. Its junction operating temperature ranges from -55°C to 150°C. The capacitance at 4V and 1MHz is rated at 16pF. This component is commonly employed in power supply circuits, voltage clamping, and general rectification applications across various industrial and consumer electronics sectors. The ES1LD-R3G is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 16pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
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