ES1GHR3G
DIODE GEN PURP 400V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES1GHR3G is a general-purpose diode designed for robust performance in demanding applications. This component features a 400V reverse voltage (Vr) capability and a 1A average rectified current (Io). Its fast recovery time of 35ns, coupled with a forward voltage (Vf) of 1.3V at 1A, ensures efficient operation. The ES1GHR3G is housed in a compact DO-214AC (SMA) surface-mount package, suitable for high-density board layouts. With a junction operating temperature range of -55°C to 150°C and AEC-Q101 qualification, this diode is engineered for reliability in automotive and industrial sectors. Its low reverse leakage current of 5 µA at 400 V and a capacitance of 16pF at 4V (1MHz) further contribute to its suitability for power supply and switching applications. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 16pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
| Qualification | AEC-Q101 |
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