ES1F R3G
DIODE GEN PURP 300V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ES1F-R3G is a general-purpose rectifier diode with a repetitive peak reverse voltage (Vrrm) of 300V. This DO-214AC (SMA) packaged device offers an average rectified forward current (Io) of 1A. Featuring a fast recovery time (trr) of 35 ns, it is suitable for applications requiring switching speeds up to 500ns. The diode exhibits a maximum forward voltage (Vf) of 1.3V at 1A and a reverse leakage current of 5 µA at 300V. Its junction capacitance is rated at 18pF at 4V and 1MHz. The ES1F-R3G is designed for surface mounting and operates within a temperature range of -55°C to 150°C. This component is commonly utilized in power supply rectification, switching power supplies, and general-purpose rectification across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 18pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 300 V |
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