ES1DVHR3G
DIODE GEN PURP 200V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES1DVHR3G is a general-purpose diode designed for demanding applications. This surface-mount component, housed in a DO-214AC (SMA) package, offers a 200V reverse voltage and a 1A average rectified current. It features a fast recovery time of 15ns and a low forward voltage of 920mV at 1A. The diode exhibits a reverse leakage current of 5µA at 200V and a capacitance of 17pF at 4V and 1MHz. Engineered to meet stringent automotive standards, this AEC-Q101 qualified component operates across a wide temperature range of -55°C to 150°C. Its robust construction and performance characteristics make it suitable for automotive, industrial, and consumer electronics sectors. The ES1DVHR3G is supplied on tape and reel for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 15 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 17pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Qualification | AEC-Q101 |
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