ES1DV R3G
DIODE GEN PURP 200V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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The Taiwan Semiconductor Corporation ES1DV-R3G is a general-purpose diode with a 200V reverse voltage rating and a 1A forward current capacity. This surface-mount device, housed in a DO-214AC (SMA) package, features a fast recovery time of 15 ns. Its forward voltage drop is a maximum of 920 mV at 1A, with a reverse leakage current of 5 µA at 200V. The component exhibits a capacitance of 17pF at 4V and 1MHz. Operating across a junction temperature range of -55°C to 150°C, the ES1DV-R3G is suitable for applications in power supply rectification and general-purpose switching circuits within the automotive and consumer electronics industries. The ES1DV-R3G is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 15 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 17pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
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