ES1DLHM2G
DIODE GEN PURP 200V 1A SUB SMAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES1DLHM2G is a general-purpose diode featuring a 200V reverse voltage and a 1A average rectified current. This Sub SMA packaged component, identified by part number ES1DLHM2G, is constructed using standard technology and offers a fast recovery time of 35 ns. Its forward voltage drop is a maximum of 950 mV at 1A, with a reverse leakage current of 5 µA at 200V. The diode exhibits a capacitance of 10pF at 4V and 1MHz. Qualified to AEC-Q101 standards and featuring an automotive grade, this surface mount device operates within a junction temperature range of -55°C to 150°C. Its robust specifications make it suitable for applications in the automotive industry. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-219AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | Sub SMA |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Qualification | AEC-Q101 |
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