ES1DL RTG
DIODE GEN PURP 200V 1A SUB SMAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ES1DL-RTG is a general-purpose diode designed for demanding applications. This Sub SMA packaged device offers a 200V reverse voltage (Vr) and a 1A average rectified forward current (Io). Key performance characteristics include a 950mV maximum forward voltage (Vf) at 1A and a low 5µA reverse leakage current at 200V. With a typical capacitance of 10pF at 1V and 1MHz, and a reverse recovery time (trr) of 35ns, this diode falls into the fast recovery category. The ES1DL-RTG is suitable for surface mount applications and operates across a wide junction temperature range of -55°C to 150°C. This component is frequently utilized in power supply circuits, automotive electronics, and industrial control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-219AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | Sub SMA |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
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