ES1DL RFG
DIODE GEN PURP 200V 1A SUB SMAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES1DL-RFG is a general-purpose diode designed for high-volume surface-mount applications. This Sub SMA package (DO-219AB) houses a device with a maximum reverse voltage (Vr) of 200V and an average rectified current (Io) of 1A. Featuring a fast recovery time (trr) of 35 ns, it is suitable for applications requiring switching speeds up to 500ns at currents exceeding 200mA. The forward voltage (Vf) is rated at a maximum of 950mV at 1A. Reverse leakage current at its maximum voltage is a low 5 µA @ 200 V, with a typical capacitance of 10pF at 1V and 1MHz. Operating from -55°C to 150°C, this diode is commonly utilized in power supply rectification, voltage clamping, and general-purpose switching circuits across various industrial and consumer electronics sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-219AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | Sub SMA |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
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