ES1C M2G
DIODE GEN PURP 150V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES1C-M2G is a general-purpose diode engineered for reliable performance in demanding applications. This surface-mount component, housed in a DO-214AC (SMA) package, offers a reverse voltage rating of 150V and a forward current handling capability of 1A. Key specifications include a forward voltage drop of 950mV at 1A and a reverse leakage current of 5µA at 150V. The diode exhibits a capacitance of 16pF at 1V and 1MHz, and a reverse recovery time (trr) of 35ns, classifying it as a fast recovery diode. Operating across a junction temperature range of -55°C to 150°C, the ES1C-M2G is suitable for use in industrial, automotive, and consumer electronics power supply and switching circuits. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 16pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 150 V |
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