ES1B R3G
DIODE GEN PURP 100V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES1B-R3G is a general-purpose rectifier diode with a 1A average rectified current (Io) and a 100V DC reverse voltage (Vr) rating. This device features a fast recovery time (trr) of 35 ns and a forward voltage (Vf) of 950 mV at 1A. It exhibits a low reverse leakage current of 5 µA at 100V and a capacitance of 16pF at 4V and 1MHz. The ES1B-R3G is housed in a DO-214AC (SMA) surface-mount package and is supplied on tape and reel. Its operating junction temperature range is -55°C to 150°C. This component is commonly utilized in power supply circuits, switching power applications, and general rectification within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 16pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
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