ES1ALHRVG
DIODE GEN PURP 50V 1A SUB SMAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ES1ALHRVG is a general-purpose diode designed for efficient rectification. This Sub SMA packaged component offers a 50V reverse voltage (Vr) capability and a 1A average rectified current (Io). Its fast recovery characteristic, with a reverse recovery time (trr) of 35 ns, makes it suitable for applications requiring rapid switching. The diode exhibits a forward voltage (Vf) of 950 mV at 1A and a low reverse leakage current of 5 µA at 50V. With a junction operating temperature range of -55°C to 150°C and a capacitance of 10pF at 4V and 1MHz, the ES1ALHRVG is ideal for power supplies, automotive electronics, and industrial control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-219AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | Sub SMA |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V |
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