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ES1AL R3G

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ES1AL R3G

DIODE GEN PURP 50V 1A SUB SMA

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

Quality Control: Learn More

Taiwan Semiconductor Corporation ES1AL-R3G is a general-purpose diode with a maximum reverse voltage of 50V and an average rectified current of 1A. This Sub SMA package component features a forward voltage of 950mV at 1A and a reverse leakage current of 5µA at 50V. The ES1AL-R3G offers a reverse recovery time of 35ns, categorizing it under fast recovery diodes. Its capacitance is rated at 10pF at 1V and 1MHz. The operating junction temperature range is -55°C to 150°C. Mounting is surface mount, with the component supplied in Tape & Reel (TR) packaging. This device is suitable for applications in consumer electronics, industrial control, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDO-219AB
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard
Capacitance @ Vr, F10pF @ 1V, 1MHz
Current - Average Rectified (Io)1A
Supplier Device PackageSub SMA
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 1 A
Current - Reverse Leakage @ Vr5 µA @ 50 V

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