BYG23M R3G
DIODE GEN PURP 1.5A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation BYG23M-R3G is a general-purpose diode designed for high-voltage applications. This surface-mount device, housed in a DO-214AC (SMA) package, offers a maximum DC reverse voltage (Vr) of 1000 V and an average rectified forward current (Io) of 1.5 A. The forward voltage drop (Vf) is rated at 1.7 V at 1.5 A. Featuring a reverse recovery time (trr) of 65 ns, this diode is classified as fast recovery. Its low reverse leakage current is 1 µA at 1000 V, with a capacitance of 15 pF at 4 V and 1 MHz. The BYG23M-R3G operates across a junction temperature range of -55°C to 150°C and is supplied in Tape & Reel (TR) packaging. This component finds application in power supplies, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 65 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1.5A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1.5 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 1000 V |
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