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BYG21M R3G

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BYG21M R3G

DIODE AVALANCHE 1KV 1.5A DO214AC

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

Quality Control: Learn More

Taiwan Semiconductor Corporation BYG21M-R3G is a fast recovery avalanche diode designed for robust performance. This surface mount device, housed in a DO-214AC (SMA) package, offers a maximum DC reverse voltage of 1000V and a forward voltage of 1.6V at 1.5A. With an average rectified current of 1.5A and a reverse leakage of 1 µA at 1000V, it features a capacitance of 13pF at 4V and 1MHz. The BYG21M-R3G boasts a reverse recovery time of 120 ns and operates across a junction temperature range of -55°C to 150°C. Its avalanche technology ensures enhanced reliability in demanding applications, commonly found in power supplies, lighting, and industrial control systems. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDO-214AC, SMA
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)120 ns
TechnologyAvalanche
Capacitance @ Vr, F13pF @ 4V, 1MHz
Current - Average Rectified (Io)1.5A
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr1 µA @ 1000 V

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