BYG20J R3G
DIODE GEN PURP 600V 1.5A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation BYG20J-R3G is a general-purpose diode with a 600V reverse voltage rating and an average rectified current capability of 1.5A. This device features a fast recovery time of 75ns, categorized as Fast Recovery =< 500ns, > 200mA (Io). The forward voltage drop is specified at a maximum of 1.4V at 1.5A. Exhibiting a low reverse leakage current of 1 µA at 600V, the BYG20J-R3G is housed in a DO-214AC (SMA) surface mount package. Operating across a junction temperature range of -55°C to 150°C, this component finds application in various industrial sectors including automotive, industrial automation, and consumer electronics. The BYG20J-R3G is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1.5A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 1.5 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
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