BA159G B0G
DIODE GEN PURP 1A DO204ALManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation BA159G-B0G is a general-purpose diode designed for high voltage applications. This through-hole component features a maximum DC reverse voltage (Vr) of 1000 V and an average rectified forward current (Io) of 1 A. The diode exhibits a forward voltage (Vf) of 1.2 V at 1 A and a reverse leakage current of 5 µA at its maximum reverse voltage. With a reverse recovery time (trr) of 250 ns, it is classified as a fast recovery diode. The component is housed in a DO-204AL (DO-41) axial package and operates across a junction temperature range of -55°C to 150°C. Capacitance at 4V and 1MHz is 15pF. This device finds application in power supplies, voltage clamping, and general rectification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-204AL, DO-41, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 250 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-204AL (DO-41) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
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