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BA158GHB0G

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BA158GHB0G

DIODE GEN PURP 600V 1A DO204AL

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

Quality Control: Learn More

Taiwan Semiconductor Corporation BA158GHB0G is a general-purpose rectifier diode with a maximum repetitive reverse voltage of 600V. This AEC-Q101 qualified component features an average rectified forward current of 1A and a low reverse leakage of 5 µA at 600V. The forward voltage drop is a maximum of 1.2V at 1A. The diode exhibits a reverse recovery time of 150 ns, classifying it as a fast recovery device. The capacitance at 4V and 1MHz is 15pF. It is housed in a DO-204AL (DO-41) axial package and is suitable for through-hole mounting. The operating junction temperature range is -55°C to 150°C. This component is typically utilized in automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseDO-204AL, DO-41, Axial
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)150 ns
TechnologyStandard
Capacitance @ Vr, F15pF @ 4V, 1MHz
Current - Average Rectified (Io)1A
Supplier Device PackageDO-204AL (DO-41)
Operating Temperature - Junction-55°C ~ 150°C
GradeAutomotive
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 1 A
Current - Reverse Leakage @ Vr5 µA @ 600 V
QualificationAEC-Q101

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