TSD2150ACY RMG
TRANS NPN 50V 3A SOT89Manufacturer: Taiwan Semiconductor Corporation
Categories: Single Bipolar Transistors
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Taiwan Semiconductor Corporation TSD2150ACY-RMG is a NPN bipolar junction transistor designed for surface mount applications within a TO-243AA (SOT-89) package. This device offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 3A. It features a transition frequency of 90MHz and a power dissipation of 600mW at an operating junction temperature of 150°C. The transistor exhibits a minimum DC current gain (hFE) of 200 at 500mA collector current and 2V Vce, with a Vce saturation of 500mV at 200mA base current and 2A collector current. The collector cutoff current (ICBO) is specified at a maximum of 100nA. This component finds application in power switching and linear amplification circuits across various industrial sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 90MHz |
| Supplier Device Package | SOT-89 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 600 mW |
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