TSC966CT B0G
TRANS NPN 400V 0.3A TO92Manufacturer: Taiwan Semiconductor Corporation
Categories: Single Bipolar Transistors
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Taiwan Semiconductor Corporation's NPN bipolar junction transistor, part number TSC966CT-B0G, offers a 400V collector-emitter breakdown voltage and a continuous collector current of up to 300mA. This device features a transition frequency of 50MHz and a maximum power dissipation of 1W. The NPN transistor exhibits a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V collector-emitter voltage. Saturation voltage is specified as a maximum of 1V at 5mA base current and 50mA collector current. The TSC966CT-B0G is housed in a TO-92 package, suitable for through-hole mounting, and operates across a junction temperature range of -55°C to 150°C. This component finds application in general-purpose switching and amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 1 W |
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