TSB772CK C0G
TRANS PNP 30V 3A TO126Manufacturer: Taiwan Semiconductor Corporation
Categories: Single Bipolar Transistors
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Taiwan Semiconductor Corporation TSB772CK-C0G is a PNP bipolar junction transistor (BJT) designed for robust performance. This through-hole component, housed in a TO-126 package, offers a collector-emitter breakdown voltage of 30V and a continuous collector current capability of up to 3A. With a maximum power dissipation of 10W and an operating junction temperature of 150°C, it is suitable for demanding applications. The transistor exhibits a minimum DC current gain (hFE) of 100 at 1A and 2V, with a transition frequency of 80MHz. Key parameters include a Vce saturation of 500mV at 200mA and 2A, and a collector cutoff current of 1µA. This device finds application in industrial power supplies, automotive electronics, and general-purpose amplification and switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 2V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 10 W |
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