TSA1765CW RPG
TRANS PNP 560V 0.15A SOT223Manufacturer: Taiwan Semiconductor Corporation
Categories: Single Bipolar Transistors
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Taiwan Semiconductor Corporation's TSA1765CW-RPG is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. This component features a maximum collector emitter breakdown voltage (Vce) of 560V and a continuous collector current (Ic) of 150mA. With a transition frequency (fT) of 50MHz and a maximum power dissipation of 2W, the TSA1765CW-RPG is suitable for power switching and amplification circuits. It offers a minimum DC current gain (hFE) of 150 at 1mA and 10V, with a Vce(sat) of 500mV at 10mA and 50mA. The device operates within a junction temperature range of 150°C and is supplied in a SOT-223 (TO-261-4, TO-261AA) surface mount package, providing 100nA (ICBO) collector cutoff current. This transistor finds application in areas such as industrial power supplies and high-voltage control circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SOT-223 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 560 V |
| Power - Max | 2 W |
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