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TS13005CK B0G

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TS13005CK B0G

TRANS NPN 400V 3A TO126

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Bipolar Transistors

Quality Control: Learn More

Taiwan Semiconductor Corporation TS13005CK-B0G is an NPN bipolar junction transistor designed for high-voltage applications. This component features a 400V collector-emitter breakdown voltage and a maximum continuous collector current of 3A, with a power dissipation rating of 20W. The device is packaged in a TO-126 (TO-225AA) through-hole package. Key electrical parameters include a minimum DC current gain (hFE) of 24 at 425mA, 2V, and a saturation voltage (Vce Sat) of 1.5V at 500mA, 2.5A. The maximum collector cutoff current is 10µA, and it operates within a junction temperature range of 150°C. This transistor is suitable for use in power switching and general-purpose amplification applications within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce24 @ 425mA, 2V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max20 W

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