TS13002ACT A3G
TRANS NPN 400V 0.3A TO92Manufacturer: Taiwan Semiconductor Corporation
Categories: Single Bipolar Transistors
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Taiwan Semiconductor Corporation TS13002ACT-A3G is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. This through-hole component features a maximum collector current of 300 mA and a collector-emitter breakdown voltage of 400 V. It exhibits a transition frequency of 4 MHz and a maximum power dissipation of 600 mW. The DC current gain (hFE) is a minimum of 25 at 100 mA collector current and 10 V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 1.5 V when driven by 20 mA base current for 200 mA collector current. The device is housed in a standard TO-92 package, provided in Tape & Box packaging. Applications include power supplies, lighting control, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 100mA, 10V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 600 mW |
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