KTC3198-GR B1G
TRANS NPN 50V 0.15A TO92Manufacturer: Taiwan Semiconductor Corporation
Categories: Single Bipolar Transistors
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Taiwan Semiconductor Corporation's KTC3198-GR-B1G is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 150mA. With a transition frequency of 80MHz and a power dissipation of 500mW, it is suitable for use in consumer electronics and industrial control systems. The device offers a minimum DC current gain (hFE) of 70 at 2mA collector current and 6V collector-emitter voltage. Saturation voltage at 10mA base current and 100mA collector current is specified at a maximum of 250mV. The KTC3198-GR-B1G is provided in a TO-92 package for through-hole mounting and operates over an extended temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
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