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TSM4953DCS

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TSM4953DCS

MOSFET 2P-CH 30V 4.9A 8SOP

Manufacturer: Taiwan Semiconductor Corporation

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The Taiwan Semiconductor Corporation TSM4953DCS is a 2 P-Channel MOSFET array housed in an 8-SOP package. This surface mount component features a drain-source voltage of 30V and a continuous drain current capability of 4.9A at 25°C, with a maximum power dissipation of 2.5W. The on-resistance (Rds On) is specified at 60mOhm at 4.9A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 28nC maximum at 10V and input capacitance (Ciss) of 745pF maximum at 15V. The threshold voltage (Vgs(th)) is 3V maximum at 250µA. This device operates within a temperature range of -55°C to 150°C. The TSM4953DCS is commonly utilized in industrial, automotive, and consumer electronics applications requiring efficient power switching. The component is supplied on a Tape & Reel (TR) for automated assembly processes.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Configuration2 P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.5W (Ta)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds745pF @ 15V
Rds On (Max) @ Id, Vgs60mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOP

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