TSM4936DCS
MOSFET 2N-CH 30V 5.9A 8SOPManufacturer: Taiwan Semiconductor Corporation
Categories: FET, MOSFET Arrays
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The Taiwan Semiconductor Corporation TSM4936DCS is a 2 N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.9A at 25°C. The ON-resistance (Rds On) is specified at a maximum of 36mOhm at 5.9A and 10V Vgs. Key parameters include a gate charge (Qg) of 13nC (max) at 10V and input capacitance (Ciss) of 610pF (max) at 15V. Packaged in an 8-SOP (8-SOIC) surface mount configuration, it offers a power dissipation of 3W. The TSM4936DCS is suitable for use in automotive, industrial automation, and consumer electronics sectors. It operates across a temperature range of -55°C to 150°C. This device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 15V |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 5.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOP |
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