TQM250NB06DCR RLG
MOSFET 2N-CH 60V 6A/30A 8PDFNUManufacturer: Taiwan Semiconductor Corporation
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Taiwan Semiconductor Corporation TQM250NB06DCR-RLG is a dual N-channel MOSFET array designed for automotive applications, qualified to AEC-Q101 standards. This device features a 60V drain-to-source voltage and offers continuous drain current capabilities of 6A at ambient temperature (Ta) and 30A at case temperature (Tc). The MOSFET array provides a maximum power dissipation of 2.5W (Ta) or 58W (Tc). Key electrical parameters include a gate charge (Qg) of 24nC (max) at 10V and input capacitance (Ciss) of 1398pF (max) at 30V. On-resistance (Rds On) is rated at 25mOhm maximum at 6A and 10V. The component is housed in an 8-PowerTDFN package with wettable flanks, suitable for surface mounting. Operating temperature range is -55°C to 175°C. This component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W (Ta), 58W (Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 30A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1398pF @ 30V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | 8-PDFNU (5x6) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
TSM076NH04LDCR RLG
MOSFET 2N-CH 40V 14A/34A 8PDFNU
TSM9926DCS RLG
MOSFET 2N-CH 20V 6A 8SOP
TSM6866SDCA
MOSFET 2N-CH 20V 6A 8TSSOP
