TQM110NB04DCR RLG
MOSFET 2N-CH 40V 10A/50A 8PDFNUManufacturer: Taiwan Semiconductor Corporation
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Taiwan Semiconductor Corporation TQM110NB04DCR-RLG, a dual N-channel MOSFET, offers a 40V Vds rating and a continuous drain current capability of 10A at ambient temperature and 50A at case temperature. This device features a low Rds(on) of 11mOhm at 10A, 10V, facilitating efficient power switching. The 8-PDFNU (5x6) package with wettable flank technology ensures robust surface mounting and improved solder joint reliability. With a maximum power dissipation of 2.5W (Ta) and 58W (Tc), and an operating junction temperature range of -55°C to 175°C, the TQM110NB04DCR-RLG is suitable for demanding automotive applications qualified to AEC-Q101 standards. Key electrical parameters include a maximum gate charge of 26nC at 10V and a maximum input capacitance of 1354pF at 20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W (Ta), 58W (Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 50A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1354pF @ 20V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | 8-PDFNU (5x6) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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