TSCDH20065G1
DIODE ARR SCHOTT 650V 20A TO247Manufacturer: Taiwan Semiconductor Corporation
Categories: Diode Arrays
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Taiwan Semiconductor Corporation's TSCDH20065G1 is a high-performance Schottky diode array featuring a common cathode configuration. This component is rated for a maximum DC reverse voltage of 650 V and offers an average rectified current of 20 A per diode. The forward voltage drop at 10 A is a maximum of 1.45 V, and the reverse leakage current at 650 V is a low 20 µA. Designed for through-hole mounting in a TO-247-3 package, it operates across a junction temperature range of -55°C to 175°C. The absence of significant reverse recovery time above 500 mA (Io) makes it suitable for demanding applications. This diode array finds utility in power supply circuits, power factor correction, and high-frequency switching applications across industries such as industrial automation, telecommunications, and renewable energy.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 20A |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 10 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
| Qualification | - |
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