HERF1006G
DIODE ARRAY GP 600V 10A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Diode Arrays
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Taiwan Semiconductor Corporation HERF1006G is a Diode Array featuring a common cathode configuration with two diodes. This component offers a maximum DC reverse voltage of 600V and a forward voltage of 1.7V at 10A. The average rectified current per diode is 10A, with a reverse leakage of 10 µA at 600V. Designed for fast recovery with a trr of 80 ns, this device is suitable for applications requiring rapid switching characteristics. The HERF1006G is housed in an ITO-220AB package, a TO-220-3 Full Pack with an isolated tab, allowing for through-hole mounting. Operating junction temperatures range from -55°C to 150°C. This diode array finds utility in power supply rectification, inverters, and high-frequency switching applications across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 80 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 10A |
| Supplier Device Package | ITO-220AB |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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