SCT070H120G3-7
SILICON CARBIDE POWER MOSFET 120Manufacturer: STMicroelectronics
Categories: Unclassified
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STMicroelectronics SILICON CARBIDE POWER MOSFET 120A 1200V TO-247-3 is a high-performance discrete semiconductor device designed for demanding power applications. This SiC MOSFET offers superior switching efficiency and reduced conduction losses compared to traditional silicon-based devices, making it ideal for high-frequency power conversion in industrial motor drives, electric vehicle charging infrastructure, and renewable energy systems. Its robust construction in a TO-247-3 package ensures excellent thermal management for reliable operation under stress. This component is supplied in Tape & Reel packaging for automated assembly processes.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
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