STGY80H65DFB
IGBT 650V 120A 469W MAX247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGY80H65DFB is a 650V Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component offers a continuous collector current (Ic) of 120A and a pulsed collector current (Icm) of 240A, with a maximum power dissipation of 469W. Featuring a low Vce(on) of 2V at 15V gate-emitter voltage and 80A collector current, it minimizes conduction losses. The device exhibits switching energies of 2.1mJ (on) and 1.5mJ (off) at 400V, 80A, 10 Ohm, and 15V, with turn-on and turn-off delays of 84ns and 280ns respectively at 25°C. The STGY80H65DFB is housed in a TO-247-3 package (MAX247™) for through-hole mounting and operates across a wide temperature range of -55°C to 175°C (TJ). This IGBT is suitable for use in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 85 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A |
| Supplier Device Package | MAX247™ |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 84ns/280ns |
| Switching Energy | 2.1mJ (on), 1.5mJ (off) |
| Test Condition | 400V, 80A, 10Ohm, 15V |
| Gate Charge | 414 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 469 W |
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