STGWT80V60F
IGBT 600V 120A 469W TO-3PManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGWT80V60F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a 600 V collector-emitter breakdown voltage (Vce) and a continuous collector current (Ic) capability of 120 A, with a pulsed current (Icm) rating of 240 A. The device offers a maximum power dissipation of 469 W. Key electrical characteristics include a low on-state voltage (Vce(on)) of 2.3 V at 15 V gate-emitter voltage and 80 A collector current, and a gate charge of 448 nC. Switching performance is characterized by typical turn-on delay (Td(on)) of 60 ns and turn-off delay (Td(off)) of 220 ns at 25°C, with switching energy at 1.8 mJ (on) and 1 mJ (off) under the specified test conditions. The STGWT80V60F is housed in a TO-3P-3, SC-65-3 package for through-hole mounting and operates within an ambient temperature range of -55°C to 175°C. This IGBT is suitable for use in industrial motor drives, power factor correction, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 80A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 60ns/220ns |
| Switching Energy | 1.8mJ (on), 1mJ (off) |
| Test Condition | 400V, 80A, 10Ohm, 15V |
| Gate Charge | 448 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 469 W |
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