STGWT80V60DF
IGBT 600V 120A 469W TO-3PManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGWT80V60DF Trench Field Stop Insulated Gate Bipolar Transistor (IGBT). This device features a 600 V collector-emitter breakdown voltage and a continuous collector current of 120 A, with pulsed capability up to 240 A. The maximum power dissipation is rated at 469 W. Designed with a Trench Field Stop IGBT technology, it offers efficient switching with typical on-state voltage of 2.3 V at 15 V gate-emitter voltage and 80 A collector current. Gate charge is 448 nC. Operating temperature range is -55°C to 175°C (TJ). The STGWT80V60DF is provided in a TO-3P package for through-hole mounting. This component is suitable for applications in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 80A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 60ns/220ns |
| Switching Energy | 1.8mJ (on), 1mJ (off) |
| Test Condition | 400V, 80A, 5Ohm, 15V |
| Gate Charge | 448 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 469 W |
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