STGWT80H65FB
IGBT 650V 120A 469W TO3P-3LManufacturer: STMicroelectronics
Categories: Single IGBTs
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The STMicroelectronics STGWT80H65FB is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 120 A, with a pulsed current capability of 240 A. It offers a maximum power dissipation of 469 W and a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 80A collector current. The STGWT80H65FB exhibits typical switching characteristics with turn-on delay (Td(on)) of 84 ns and turn-off delay (Td(off)) of 280 ns at 25°C, and switching energies of 2.1 mJ (on) and 1.5 mJ (off). The device operates across a temperature range of -55°C to 175°C (TJ). Packaged in a TO-3P-3 (SC-65-3) through-hole configuration, this IGBT is suitable for industrial power supplies, motor drives, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 84ns/280ns |
| Switching Energy | 2.1mJ (on), 1.5mJ (off) |
| Test Condition | 400V, 80A, 10Ohm, 15V |
| Gate Charge | 414 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 469 W |
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