STGWT60H60DLFB
IGBT 600V 80A 375W TO3P-3LManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGWT60H60DLFB is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A at a test condition of 400 V, 60 A, 5 Ohm, and 15 V gate drive. The IGBT exhibits a maximum on-state voltage (Vce(on)) of 2 V at 15 V gate-emitter voltage and 60 A collector current. It handles a pulsed collector current (Icm) of up to 240 A and dissipates a maximum power of 375 W.
The STGWT60H60DLFB is packaged in a TO-3P-3, SC-65-3 through-hole configuration, suitable for robust thermal management. Key parameters include a gate charge of 306 nC and a typical turn-off switching energy of 626 µJ. The operating junction temperature range is -55°C to 175°C. This device is widely utilized in industrial motor drives, power supplies, and renewable energy systems where high voltage and current handling capabilities are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 60A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/160ns |
| Switching Energy | 626µJ (off) |
| Test Condition | 400V, 60A, 5Ohm, 15V |
| Gate Charge | 306 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 375 W |
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