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STGWT60H60DLFB

IGBT 600V 80A 375W TO3P-3L

Manufacturer: STMicroelectronics

Categories: Single IGBTs

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STMicroelectronics STGWT60H60DLFB is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A at a test condition of 400 V, 60 A, 5 Ohm, and 15 V gate drive. The IGBT exhibits a maximum on-state voltage (Vce(on)) of 2 V at 15 V gate-emitter voltage and 60 A collector current. It handles a pulsed collector current (Icm) of up to 240 A and dissipates a maximum power of 375 W. The STGWT60H60DLFB is packaged in a TO-3P-3, SC-65-3 through-hole configuration, suitable for robust thermal management. Key parameters include a gate charge of 306 nC and a typical turn-off switching energy of 626 µJ. The operating junction temperature range is -55°C to 175°C. This device is widely utilized in industrial motor drives, power supplies, and renewable energy systems where high voltage and current handling capabilities are critical.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2V @ 15V, 60A
Supplier Device PackageTO-3P
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C-/160ns
Switching Energy626µJ (off)
Test Condition400V, 60A, 5Ohm, 15V
Gate Charge306 nC
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)240 A
Power - Max375 W

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