STGWT40V60DLF
IGBT 600V 80A 283W TO3P-3Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGWT40V60DLF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power conversion applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A at a case temperature of 25°C, with a pulsed capability of 160 A. The STGWT40V60DLF offers a maximum power dissipation of 283 W and a low on-state voltage of 2.3 V at 15 V gate-emitter voltage and 40 A collector current. Key switching characteristics include a turn-off delay of 208 ns at 25°C and a switching energy of 411 µJ (off) under specified test conditions (400 V, 40 A, 10 O, 15 V). The gate charge is 226 nC. This IGBT is packaged in a TO-3P-3 (SC-65-3) through-hole package, making it suitable for demanding industrial applications such as motor drives, power supplies, and welding equipment. The operating junction temperature range is from -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/208ns |
| Switching Energy | 411µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 226 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 283 W |
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