STGWT40V60DF
IGBT 600V 80A 283W TO3P-3Manufacturer: STMicroelectronics
Categories: Single IGBTs
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The STMicroelectronics STGWT40V60DF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A, with a pulsed capability of 160 A. The STGWT40V60DF offers a maximum power dissipation of 283 W and a low on-state voltage of 2.3V at 15V gate-emitter voltage and 40A collector current. Key switching parameters include a reverse recovery time (trr) of 41 ns and switching energies of 456µJ (on) and 411µJ (off) under specified test conditions (400V, 40A, 10 Ohm, 15V). The gate charge is 226 nC. This device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a TO-3P-3 (SC-65-3) package, suitable for through-hole mounting. It is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 41 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 52ns/208ns |
| Switching Energy | 456µJ (on), 411µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 226 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 283 W |
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